The Effect of Drive-in Temperature on Boron Diffusion Uniformity and Sheet Resistance in Industrial TOPCon Solar Cells

Information from the abstract

TOPCon solar cells are widely used in industry due to their high efficiency and stable performance. The quality of the emitter layer plays an important role in cell performance determination. This study investigated the effect of drive-in temperature on sheet resistance and boron diffusion uniformity in n-type TOPCon solar cells under industrial processing conditions. The experiment was conducted using a DOA-40 diffusion furnace and 24 silicon wafers with dimensions of 210 × 210 mm. Boron diffusion was performed using BCl₃ gas at three drive-in temperatures: 885, 910, and 945 °C. To isolate the effect of temperature, the oxidation step was omitted. Sheet resistance (Rs) was measured at nine positions on each wafer using a four-point probe system, and the results were used to evaluate diffusion uniformity. The results showed that increasing drive-in temperature reduced sheet resistance and improved diffusion uniformity. Within the tested temperature range, the 945 °C condition produced the lowest sheet resistance (92–103 Ω/sq) and the lowest standard deviation (1.80–3.81 Ω/sq). Heatmap analysis further confirmed a more uniform sheet resistance distribution at higher temperatures. These findings indicate that drive-in temperature is an important parameter influencing boron diffusion behavior and diffusion uniformity in industrial TOPCon solar cell manufacturing.

Why this record is monitored

This record has an Impact Signal of 72/100 based on recency, source, collaboration, and bibliographic signals. It prioritizes monitoring and is not a judgment of research quality.

Related topics: Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies · Semiconductor materials and devices